Semiconductor Device with Contact Structures Extending Through an Interlayer and Method of Manufacturing

摘要

A layer stack is formed on a main surface of a semiconductor layer, wherein the layer stack includes a dielectric capping layer and a metal layer between the capping layer and the semiconductor layer. Second portions of the layer stack are removed to form gaps between remnant first portions. Adjustment structures of a second dielectric material are formed in the gaps. An interlayer of the first or a third dielectric material is formed that covers the adjustment structures and the first portions. Contact trenches are formed that extend through the interlayer and the capping layer to metal structures formed from remnant portions of the metal layer in the first portions, wherein the capping layer is etched selectively against the auxiliary structures.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming transistor cells in a semiconductor portion; forming a layer stack on a main surface of a semiconductor layer, wherein the layer stack comprises a dielectric capping layer and a metal layer between the capping layer and the semiconductor layer; removing second portions of the layer stack to form gaps between remnant first portions of the layer stack, wherein from the metal layer first metal structures that directly adjoin source constructions of the transistor cells and second metal structures are formed that directly adjoin drain constructions of the transistor cells; forming auxiliary structures of a second dielectric material in the gaps; forming an interlayer of the first or a third dielectric material, wherein the interlayer covers the auxiliary structures and the first portions; and forming contact trenches extending through the interlayer and the capping layer to the first and second metal structures formed from remnant portions of the metal layer in the first portions of the layer stack, wherein the capping layer is etched selectively against the auxiliary structures.