发明名称 |
METHOD FOR ETCHING A SILICON-CONTAINING SUBSTRATE |
摘要 |
Techniques herein provide a chamber and substrate cleaning solution for etching and removing byproducts between separate etching steps. Such techniques include using a cleaning step based on fluorine chemistry, which is executed in between separate etch steps or divided etch steps. Such a technique can be executed in situ for improved efficiency. Other benefits include increasing etching depth/aspect ratios, and preventing post-etching defects including physical contact with neighboring gates, etc. Techniques herein are especially beneficial when applied to relatively small feature openings. |
申请公布号 |
WO2017035120(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
WO2016US48139 |
申请日期 |
2016.08.23 |
申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON U.S. HOLDINGS, INC. |
发明人 |
VORONIN, Sergey;RANJAN, Alok |
分类号 |
H01L21/3065;H01L21/02;H01L21/033;H01L21/3213;H01L29/78 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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