| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction structure of a chalcopyrite compound semiconductor, capable of independently controlling the particle diameter of a chalcopyrite compound semiconductor regardless of film forming conditions of the semiconductor, and to provide a photoelectric conversion device having the junction structure.SOLUTION: A photoelectric conversion device 1 includes: a substrate 2; a plurality of lower electrode layers 10 disposed on the substrate 2; a compound semiconductor layer 13 of a chalcopyrite structure which is disposed on the lower electrode layers 10 so as to collectively cover the lower electrode layers 10 and is partitioned into a plurality of pixel cells 3; and a transparent electrode layer 4 disposed on the compound semiconductor layer 13. Fine uneven structures 5 are formed on surfaces 101 of the lower electrode layers 10 and an exposed surface 191(A) of an interlayer film 19. |
