发明名称 |
Stacked half-bridge package |
摘要 |
According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package further includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of a common conductive leadframe with the common conductive leadframe electrically and mechanically coupling the control source with the sync drain. The common conductive leadframe thereby serves as the output terminal. |
申请公布号 |
US9583477(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201615157298 |
申请日期 |
2016.05.17 |
申请人 |
Infineon Technologies Americas Corp. |
发明人 |
Cho Eung San;Cheah Chuan;Sawle Andrew N. |
分类号 |
H01L21/00;H01L25/00;H01L23/495;H01L23/00;H01L21/48;H01L25/07;H01L23/31 |
主分类号 |
H01L21/00 |
代理机构 |
Shumaker & Sieffert, P.A. |
代理人 |
Shumaker & Sieffert, P.A. |
主权项 |
1. A method for manufacturing a stacked half-bridge package, said method comprising:
providing a control transistor having a control drain, a control source, and a control gate; providing a sync transistor having a sync drain, a sync source, and a sync gate; stacking said control and sync transistors on opposite sides of a common leadframe, said common leadframe serving as an output terminal by coupling said control source with said sync drain. |
地址 |
El Segundo CA US |