Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction

摘要

An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

主权项

1. An apparatus comprising:
a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device including:
a storage layer contacting a tunneling layer; anda reference layer including an equal number of magnetic layers and coupling layers, wherein a first coupling layer of the coupling layers is in contact with the tunneling layer, and wherein the magnetic layers and the coupling layers form a cobalt/iridium (Co/Ir) multilayer structure.