Schottky diodes with mesh style region and associated methods

摘要

A Schottky diode comprising a cathode region, an anode region and a guard ring region, wherein the anode region may comprise a metal Schottky contact, and the guard ring region may comprise an outer guard ring and a plurality of inner open stripes inside the outer guard ring, and wherein the inner open stripes has a shallower junction depth than the outer guard ring.

主权项

1. A semiconductor device, comprising:
a semiconductor layer of a first doping type; a guard ring region located in the semiconductor layer, wherein the guard ring region is of a second doping type, and wherein the guard ring region comprises:
an outer guard ring; andan inner mesh style region having a plurality of parallel open stripes configured to form a depletion region; a metal Schottky contact located over the guard ring region; and a cathode contact region having the first doping type located in the semiconductor layer and outside of the guard ring region.