| 发明名称 | Non-volatile memory device | ||
| 摘要 | According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction. | ||
| 申请公布号 | US9583505(B2) | 申请公布日期 | 2017.02.28 |
| 申请号 | US201414483521 | 申请日期 | 2014.09.11 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Ishida Takashi;Fukuzumi Yoshiaki;Okada Takayuki;Tsuji Masaki |
| 分类号 | H01L27/115 | 主分类号 | H01L27/115 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A non-volatile memory device comprising: first electrodes stacked on an underlying layer; a second electrode provided on the first electrodes; a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and including a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode; a memory film provided between at least one of the first electrodes and the semiconductor layer, the second portion having a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction; and a core layer adjacent to the semiconductor layer in the second direction, wherein the semiconductor layer is provided between the core layer and each of the first electrodes, and between the core layer and the second electrode. | ||
| 地址 | Minato-ku JP | ||