发明名称 |
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
摘要 |
A laterally diffused metal oxide semiconductor device includes: a substrate (10); a buried layer region (32) in the substrate; a well region (34) on the buried layer region (32); a gate region on the well region; a source region (41) and a drain region (43) which are located at two sides of the gate region; and a super junction structure. The source region (41) is located in the well region (34); the drain region (34) is located in the super junction structure; the gate region comprises a gate oxide layer and a gate electrode on the gate oxide layer; and the super junction structure comprises a plurality of N-columns and P-columns, wherein the N-columns and the P-columns are alternately arranged in a direction which is horizontal and is perpendicular to the direction of a connecting line between the source region and the drain region, each N-column comprises a top-layer N-region (23) and a bottom-layer N-region which are butted vertically, and each P-column comprises a top-layer P-region (24) and a bottom-layer P-region which are butted vertically. |
申请公布号 |
US2017054018(A1) |
申请公布日期 |
2017.02.23 |
申请号 |
US201515119868 |
申请日期 |
2015.05.04 |
申请人 |
CSMC TECHNOLOGIES FAB1 CO., LTD. |
发明人 |
ZHANG Guangsheng;ZHANG Sen |
分类号 |
H01L29/78;H01L29/66;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A laterally diffused metal oxide semiconductor device, comprising:
a substrate; a buried layer region having a second doping type formed in the substrate; a well region having the second doping type formed on the buried layer region; a gate region formed on the well region; a source region and a drain region having a first doping type located on both sides of the gate region; and a super junction structure; wherein the source region is located in the well region, the drain region is located in the super junction structure, the gate region comprises a gate oxide layer and a gate formed on the gate oxide layer, the first doping type and the second doping type are opposite conductivity types, the super junction structure comprises a plurality of N-columns and a plurality of P-columns, the plurality of N-columns and the plurality of P-columns are arranged alternately along a direction which is horizontal and is perpendicular to a connecting line between the source region and the drain region, each N-column comprises a top-layer N-region and a bottom-layer N-region which are butted vertically; each P-column comprises a top-layer P-region and a bottom-layer P-region which are butted vertically. |
地址 |
Jiangsu CN |