| 发明名称 | Flat panel X-ray detector | ||
| 摘要 | The present invention relates to a flat panel X-ray detector, which comprises a thin film transistor (TFT) substrate; a photoelectric detecting layer, which is disposed on and electrically connected with the TFT substrate, wherein the photoelectric detecting layer comprises a plurality of photoelectric detecting units and a plurality of light absorption units, and the light absorption unit is disposed between spaces adjacent to the photoelectric detecting unit; a Scintillation layer, which is disposed on the photoelectric detecting layer; and a reflective layer, which is disposed on the Scintillation layer. | ||
| 申请公布号 | US9575190(B2) | 申请公布日期 | 2017.02.21 |
| 申请号 | US201314063018 | 申请日期 | 2013.10.25 |
| 申请人 | INNOLUX CORPORATION | 发明人 | Wu Chih-Hao |
| 分类号 | G01T1/20 | 主分类号 | G01T1/20 |
| 代理机构 | Bacon & Thomas, PLLC | 代理人 | Bacon & Thomas, PLLC |
| 主权项 | 1. An X-ray flat panel detector, comprising: a thin film transistor (TFT) substrate; a photoelectric detecting layer, disposed on and electrically connected with the TFT substrate, wherein the photoelectric detecting layer comprises a plurality of photoelectric detecting units and a plurality of light absorption units which absorb visible light with a wavelength of 530 nm, and the light absorption units are disposed in spaces between adjacent photoelectric detecting units; a Scintillation layer, disposed on the photoelectric detecting layer; and a reflective layer, disposed on the Scintillation layer; wherein the reflective layer includes a plurality of reflective zones and a plurality of hollow spaces disposed in spaces between adjacent reflective zones, and the projection positions of the reflective zones on the thin film transistor substrate correspond to the positions of the photoelectric detecting units on the thin film transistor substrate. | ||
| 地址 | TW | ||