Etchant and Etching Process

摘要

A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

主权项

1. A semiconductor material etchant comprising:
a base for removing material from a waveguide substrate covered with a patterned hardmask, the base having a concentration of between 25%-wt and about 35%-wt; a surfactant for modifying an angle of etching to about 45% from a major surface of the waveguide substrate, the surfactant reactable on the waveguide substrate to form an oil by-product, the surfactant having a concentration of between about 0.01%-wt and about 0.4%-wt; and an oxidant for oxidizing the waveguide substrate beneath the oil by-product, the oxidant having a concentration of between about 0.1%-wt and about 0.2%-wt.