| 发明名称 |
Method of Manufacturing Semiconductor Device |
| 摘要 |
The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate. |
| 申请公布号 |
US2017047227(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615335221 |
申请日期 |
2016.10.26 |
| 申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
KAGA Yukinao;OGAWA Arito;SEINO Atsuro;ASHITANI Atsuhiko;MAENO Ryohei;SAKAI Masanori |
| 分类号 |
H01L21/285;H01L21/687;C23C16/44;C23C16/455;C23C16/30;C23C16/52;H01L21/67;H01L21/673 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device comprising forming a film on a substrate by repeating a cycle, the cycle comprising:
(a) supplying a source gas to the substrate accommodated in a process chamber and exhausting the source gas from the process chamber; and (b) alternately repeating: (b-1) supplying a reaction gas to the substrate in the process chamber free of the source gas; and (b-2) exhausting the reaction gas from the process chamber. |
| 地址 |
Tokyo JP |
