Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device

摘要

A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.

主权项

1. A substrate structure comprising:
a substrate; at least one seed layer provided directly on the substrate wherein the at least one seed layer comprises a graded seed layer having a composition gradient and formed of BGe; at least one buffer layer directly on the seed layer wherein the buffer layer comprises at least one layer comprising SiGe or GeSn; and a semiconductor layer directly on the at least one buffer layer, wherein the semiconductor is formed of a group III-V material that comprises at least one of InGaAs, InP, InSb, InGaSb, GaSb, and InAs.