| 摘要 |
PURPOSE:To enable the formation of a fine pattern of submicron order by forming a recess pattern by patterning a coating film and a mask film on a non-oxidizable intermediate film by lithography and etching the recess pattern which is formed to be further smaller by the oxidation of a mask film pattern for forming said recess pattern. CONSTITUTION:A non-oxidizable intermediate film 13 is arranged on a pattern- forming material 12 for forming a pattern and on this intermediate film 13, a mask film 14 which expands its volume consequently on oxidation and further a non-oxidizable coating film 15 on said mask film 14 are formed. The mask film 14 and the coating film 15 are patterned by lithography to form a recess pattern. This recess pattern is oxidized to grow an oxide film 16 on the side plane of the mask film pattern 14'. This oxide film 16 and the remaining mask film pattern 14'' are used as a mask for etching to form a fine pattern 12' on the pattern-forming material 12.
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