发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
摘要 A method of manufacturing a semiconductor device includes a process of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor containing a predetermined element to the substrate; supplying a first reactant containing nitrogen and carbon to the substrate; supplying a second reactant containing nitrogen to the substrate; and supplying a third reactant containing oxygen to the substrate, wherein in the cycle, a supply amount of the second reactant is set to be smaller than a supply amount of the first reactant.
申请公布号 US2017040157(A1) 申请公布日期 2017.02.09
申请号 US201615223288 申请日期 2016.07.29
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 HASHIMOTO Yoshitomo;HIROSE Yoshiro;MATSUOKA Tatsuru
分类号 H01L21/02;C23C16/52;C23C16/455 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device comprising a process of forming a film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: supplying a precursor containing a predetermined element to the substrate; supplying a first reactant containing nitrogen and carbon to the substrate; supplying a second reactant containing nitrogen to the substrate; and supplying a third reactant containing oxygen to the substrate, wherein in the cycle, a supply amount of the second reactant is set to be smaller than a supply amount of the first reactant.
地址 Tokyo JP