发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
摘要 |
A method of manufacturing a semiconductor device includes a process of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor containing a predetermined element to the substrate; supplying a first reactant containing nitrogen and carbon to the substrate; supplying a second reactant containing nitrogen to the substrate; and supplying a third reactant containing oxygen to the substrate, wherein in the cycle, a supply amount of the second reactant is set to be smaller than a supply amount of the first reactant. |
申请公布号 |
US2017040157(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201615223288 |
申请日期 |
2016.07.29 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
HASHIMOTO Yoshitomo;HIROSE Yoshiro;MATSUOKA Tatsuru |
分类号 |
H01L21/02;C23C16/52;C23C16/455 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device comprising a process of forming a film on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
supplying a precursor containing a predetermined element to the substrate; supplying a first reactant containing nitrogen and carbon to the substrate; supplying a second reactant containing nitrogen to the substrate; and supplying a third reactant containing oxygen to the substrate, wherein in the cycle, a supply amount of the second reactant is set to be smaller than a supply amount of the first reactant. |
地址 |
Tokyo JP |