发明名称 |
SIMPLIFIED GATE DRIVER FOR POWER TRANSISTORS |
摘要 |
A pulse-transformer-based isolated gate driver circuit uses a small count of high-temperature-qualified components to drive a power semiconductor switch with asymmetrical voltage biases. A differential driver generates a pulse signal from a pulse-width-modulated signal, which is passed to a charge and lock circuit through a transformer. The charge and lock circuit includes an activation path and a deactivation path, which are selectively open to current flow based on positive or negative voltage pulses in the pulse signal, to selectively turn the main semiconductor switch on or off. The charge and lock circuit can lock voltage across the main semiconductor switch to keep the main semiconductor switch in an “on” or and “off” state. |
申请公布号 |
US2017040994(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201514908342 |
申请日期 |
2015.03.30 |
申请人 |
HALLIBURTON ENERGY SERVICES, INC. |
发明人 |
Chen Zheng |
分类号 |
H03K17/687;H03K17/691 |
主分类号 |
H03K17/687 |
代理机构 |
|
代理人 |
|
主权项 |
1. A driver circuit, comprising:
a transformer having a secondary winding; and a charge and lock circuit couplable to a main semiconductor switch, the charge and lock circuit including:
a first diode and a transistor switch in an activation path and coupled to the secondary winding to provide a positive voltage across the main semiconductor switch; anda second diode and a Zener diode in a deactivation path and coupled to the secondary winding to provide a negative voltage across the main semiconductor switch, the negative voltage having a first magnitude that is different than a second magnitude of the positive voltage. |
地址 |
Houston TX US |