DIODE STRING IMPLEMENTATION FOR ELECTROSTATIC DISCHARGE PROTECTION

摘要

A diode string having a plurality of diodes for ESD protection of a CMOS IC device comprises a first diode and a last diode in the diode string, wherein the first diode and the last diode are both formed on a bottom layer in a silicon substrate, and remaining diodes in the diode string. The remaining diodes are formed on a top layer placed on top of the bottom layer. The diode string further comprises a plurality of conductive lines that connect the first diode and the last diode on the bottom layer sequentially with the remaining diodes on the top layer to form a three dimensional (3D) structure of the diode string.

主权项

1. A diode string having a plurality of diodes for ElectroStatic Discharge (ESD) protection of a CMOS IC device, comprising:
a first diode and a last diode in the diode string, wherein the first diode and the last diode are both formed on a bottom layer in a silicon substrate; a plurality of remaining diodes in the diode string, wherein the remaining diodes are all formed on at least one upper layer above the bottom layer, wherein the plurality of the remaining diodes on the upper layer are structurally isolated from the first diode and the last diode on the bottom layer, and wherein at least two of the remaining diodes are separated from one another by a distance sufficiently large for placement of at least one device to be disposed therebetween; and a plurality of conductive lines that connect the first diode and the last diode on the bottom layer sequentially with the remaining diodes on the at least one upper layer to form a three dimensional (3D) structure of the diode string.