Chemical direct pattern plating interconnect metallization and metal structure produced by the same

摘要

A semiconductor structure with an improved metal structure is described. The semiconductor structure can include a substrate having an upper surface, an interconnect layer over the upper surface, and an additional structure deposited over the interconnect layer. The interconnect layer can include a patterned seed layer over the substrate, at least two metal lines over the seed layer, and a dielectric material between adjacent metal lines. A barrier layer can be deposited over the at least two metal lines. Methods of making the semiconductor structures are also described.

主权项

1. A semiconductor structure comprising:
a substrate having a planar upper surface; and an interconnect layer over the planar upper surface, wherein the interconnect layer comprises:
a patterned seed layer having a first feature and a second feature, wherein said patterned seed layer is located entirely over the planar upper surface,a first metal line over the first feature, wherein the first metal line has a planar bottom surface extending between opposing sides of the first metal line, and a length of the first metal line is greater than a width of the first metal line,a second metal line over the second feature,a conductive barrier layer on the at least two metal lines, anda dielectric material disposed between the first metal line and the second metal line, wherein the first metal line has a rounded top surface, including opposing rounded sides that intersect opposite edges of the planar bottom surface.