发明名称 |
Semiconductor device package and method of making the same |
摘要 |
A semiconductor device package includes a substrate and a semiconductor device disposed on a surface of the substrate. The semiconductor device includes a first contact pad and a second contact pad disposed on an upper surface of the semiconductor device. The semiconductor device package further includes a conductive bar disposed on the first contact pad, and a conductive pillar disposed on the second contact pad. A method of making a semiconductor device package includes (a) providing a substrate; (b) mounting a semiconductor device on the substrate, wherein the semiconductor device comprises a first contact pad and a second contact pad on an upper surface of the semiconductor device; (c) forming a dielectric layer on the substrate to cover the semiconductor device; (d) exposing the second contact pad by forming a hole in the dielectric layer; and (e) applying a conductive material over the dielectric layer and filling the hole. |
申请公布号 |
US9564393(B1) |
申请公布日期 |
2017.02.07 |
申请号 |
US201514857931 |
申请日期 |
2015.09.18 |
申请人 |
ADVANCED SEMICONDUCTOR ENGINEERING, INC. |
发明人 |
Huang Chih-Yi;Chen Kuo-Hua;Chiu Chi-Tsung |
分类号 |
H01L23/00;H01L23/498;H01L21/52;H01L21/768 |
主分类号 |
H01L23/00 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP ;Liu Cliff Z. |
主权项 |
1. A semiconductor device package comprising:
a substrate; a semiconductor device disposed on a surface of the substrate, the semiconductor device including a first contact pad and a second contact pad disposed on an upper surface of the semiconductor device; a dielectric layer disposed on the surface of the substrate and covering the semiconductor device, and further covering a portion of the first contact pad and a portion of the second contact pad; a conductive bar disposed on a remaining portion of the first contact pad exposed by the dielectric layer; and a conductive pillar disposed on a remaining portion of the second contact pad exposed by the dielectric layer. |
地址 |
Kaosiung TW |