Smart verify for programming non-volatile memory

摘要

Techniques are provided for reducing current consumption while programming non-volatile storage. A smart verify is performed using a subset of memory cells. By applying the smart verify to just a subset of the memory cells current is saved. The smart verify may be used to characterize programming speed. Results of the smart verify may be used to determine a magnitude of a dummy program pulse to be applied later in the programming process. The dummy program pulse is not followed by a program verify, which reduces current. If the dummy program pulse pushes threshold voltages high enough, then those memory cells will not conduct a current when verifying later in programming. Thus, current is saved during the program verify. Also, bit lines of memory cells that received the dummy pulses do not need to be pre-charged prior to a program pulse, which can save more current.

主权项

1. A non-volatile storage device, comprising:
a plurality of non-volatile storage elements; a control circuit in communication with the non-volatile storage elements, wherein the control circuit is configured to: receive a command to program a group of the plurality of non-volatile storage elements; characterize a programming speed of the group by applying a programming signal to the group while a subset of the group is enabled for programming and remaining members of the group are inhibited from programming; based on the programming speed, determine a magnitude for one or more dummy programming pulses; apply the one or more dummy programming pulses to the group while selected ones of the remaining members of the group are enabled for programming and while the subset is inhibited from programming; and program the group of non-volatile storage elements after the one or more dummy programming pulses is applied to the group.