发明名称 Interconnect structures with intermetallic palladium joints and associated systems and methods
摘要 Interconnect structures with intermetallic palladium joints are disclosed herein. In one embodiment, a method of forming an interconnect structure includes depositing a first conductive material comprising nickel on a first conductive surface of a first die, and depositing a second conductive material comprising nickel on a second conductive surface of a second die spaced apart from the first surface. The method further includes depositing a third conductive material on the second conductive material, and thermally compressing tin/solder between the first and third conductive materials to form an intermetallic palladium joint that extends between the first conductive material and the second conductive material such that one end of the intermetallic palladium joint is bonded directly to the first conductive material and an opposite end of the intermetallic palladium joint is bonded directly to the second conductive material.
申请公布号 US9564418(B2) 申请公布日期 2017.02.07
申请号 US201414509912 申请日期 2014.10.08
申请人 Micron Technology, Inc. 发明人 Gandhi Jaspreet S.
分类号 H01L23/48;H01L23/52;H01L29/40;H01L25/065;H01L25/00;H01L23/00;H01L25/18 主分类号 H01L23/48
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP
主权项 1. An interconnect structure, comprising: a first conductive element; a second conductive element; and an intermetallic palladium joint defining a bond line thickness between the first and second conductive elements, the intermetallic palladium joint comprising a plurality of intermetallic crystallites each having a first end portion directly coupled to the first conductive element, and a second end portion directly coupled to the second conductive element, wherein each of the crystallites spans the entire bond line thickness, and wherein each of the crystallites is composed of intermetallic palladium.
地址 Boise ID US