| 发明名称 |
OXIDE SINTERED BODY AND SEMICONDUCTOR DEVICE |
| 摘要 |
There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target. |
| 申请公布号 |
US2017029933(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201515100174 |
申请日期 |
2015.04.08 |
| 申请人 |
Sumitomo Electric Industries, Ltd. |
发明人 |
Miyanaga Miki;Watatani Kenichi;Sogabe Koichi;Awata Hideaki;Kurisu Kenichi |
| 分类号 |
C23C14/34;C04B35/622;H01L29/786;C23C14/08;H01L21/02;H01L29/66;C04B35/495;H01J37/34 |
主分类号 |
C23C14/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An oxide sintered body comprising indium, tungsten, and at least one of zinc and tin, wherein
said oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. |
| 地址 |
Osaka-shi JP |
