| 摘要 |
A semiconductor device has a plurality of first semiconductor die (104). A plurality of first bumps (114) is formed over the first semiconductor die. A first protection layer (116) is formed over the first bumps. A portion of the first semiconductor die is removed in a backgrinding operation. A backside protection layer (122,222) is formed over the first semiconductor die. An encapsulant is deposited (138,208) over the first semiconductor die and first bumps. A portion of the encapsulant is removed to expose the first bumps. A conductive layer (146,216) is formed over the first bumps and encapsulant. An insulating layer (148,218) and plurality of second bumps (152,220) are formed over the conductive layer. A plurality of conductive vias (248) may be formed through the encapsulant. A plurality of the semiconductor devices may be stacked with the conductive vias electrically connecting the stacked semiconductor devices. A second semiconductor die (192) having a through silicon via (198) may be disposed over the first semiconductor die. |
