| 摘要 |
PROBLEM TO BE SOLVED: To provide a sufficiently strong termination structure on a surface of a SiC substrate, a method of forming the same, and a semiconductor element using the same.SOLUTION: In a semiconductor element comprising at least a SiC substrate and a gate insulating film formed on the SiC substrate, at an interface between the SiC substrate and the gate insulating film, a part of either or both of elements of Si and C on the topmost surface of the SiC substrate is substituted with nitrogen. |
