| 摘要 |
A substrate to be treated (W) is disposed in a chamber (40), said substrate to be treated having a silicon nitride film on the surface, and also having a polysilicon film and/or a silicon oxide film that is provided adjacent to the silicon nitride film, and NO gas and/or ozone gas, and HF gas are supplied to the inside of the chamber (40), thereby selectively etching the silicon nitride film. |
