发明名称 MULTILAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND DEVICE INCLUDING THE MULTILAYER STRUCTURE
摘要 A multilayer structure includes a first material layer (L10), a second material layer (L20), and a diffusion barrier layer (B10). The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.
申请公布号 EP3125291(A1) 申请公布日期 2017.02.01
申请号 EP20160176425 申请日期 2016.06.27
申请人 Samsung Electronics Co., Ltd. 发明人 SONG, Hyunjae;NAM, Seunggeol;PARK, Seongjun;SHIN, Keunwook;SHIN, Hyeonjin;LEE, Jaeho;LEE, Changseok;CHO, Yeonchoo
分类号 H01L23/532;H01L21/768;H01L23/485 主分类号 H01L23/532
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