| 发明名称 | Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure | ||
| 摘要 | A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing a substrate including at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface; forming the at least one semiconductor structure in contact with the silicon carbide layer, the structure including at least one part, as a contact part, in contact with the surface of the silicon carbide layer, which includes gallium. | ||
| 申请公布号 | US9559256(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201414898684 | 申请日期 | 2014.06.19 |
| 申请人 | Commissariat à l'énergie atomique et aux énergies alternatives | 发明人 | Amstatt Benoit;Daudin Bruno-Jules |
| 分类号 | H01L21/00;H01L33/00;H01L33/12;H01L21/02;H01L33/06;H01L33/08;H01L33/32;H01L33/16;H01L33/24 | 主分类号 | H01L21/00 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A method for manufacturing at least one semiconductor structure comprising: providing a substrate comprising at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface; forming the at least one semiconductor structure in contact with the amorphous silicon carbide layer, the at least one semiconductor structure comprising at least a first part in contact with the surface of the amorphous silicon carbide layer, the first part comprises gallium, wherein the at least one semiconductor structure comprises a semiconductor wire. | ||
| 地址 | Paris FR | ||