发明名称 Light emitting diode module structure and manufacturing method thereof
摘要 A light emitting diode module structural and a manufacturing method thereof are disclosed. The manufacturing method includes the steps as follows. A base and a light emitting diode die are provided. The light emitting diode die may include a first semiconductor layer and a second semiconductor layer. The light emitting diode die is disposed on the base. A buffer layer is formed to cover the light emitting diode die. A first opening and a second opening are formed on the first semiconductor layer and the second semiconductor layer, respectively. The second opening exposes the second semiconductor layer by penetrating the first semiconductor layer. A conductive pattern layer is formed on the buffer layer, and is electrically connected with the first semiconductor layer and the second semiconductor layer via the first opening and the second opening, respectively.
申请公布号 US9559277(B2) 申请公布日期 2017.01.31
申请号 US201514658712 申请日期 2015.03.16
申请人 WISETOP TECHNOLOGY CO., LTD. 发明人 Liang Wei-Chen;Chang Pin
分类号 H01L33/00;H01L33/62;H01L33/38;H01L33/40 主分类号 H01L33/00
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A light emitting diode module structure, comprising: a base having an upper surface; at least one light emitting diode die, disposed on the upper surface of the base, and comprising a first semiconductor layer and a second semiconductor layer; a buffer layer covering the at least one light emitting diode die and having a first opening and a second opening on the first semiconductor layer and the second semiconductor layer of the at least one light emitting diode die respectively, and the second opening penetrating the first semiconductor layer; and a conductive pattern layer formed on the buffer layer, and the conductive pattern layer electrically connected with the first semiconductor layer and the second semiconductor layer of the at least one light emitting diode die respectively via the first opening and the second opening; wherein the at least one light emitting diode die excludes electrodes, and the conductive pattern layer is electrically connected with the first semiconductor layer and the second semiconductor layer.
地址 Hsinchu TW