Low energy electron beam lithography

摘要

The system for drawing a pattern on a resist layer covering a semiconductor wafer, comprising an electron gun housing unit provided with a plurality of small-sized electron guns (wherein the housing unit has a hollow column section for releasing an electron beam, and a micro deflection unit is disposed inside for adjusting the inclination of the electron beam), a movable stage capable of moving in the X-Y directions, a wafer stage disposed on the movable stage to support a semiconductor wafer, a mask wafer having struts on its rear side for supporting membranes on which a pattern to be transferred is formed, a mask stage for holding the mask wafer, a matching detection unit for detecting a misalignment between the mask wafer and the semiconductor wafer, and an inclination means connected to the micro deflection unit and the matching detection unit for inclining the electron beam.

主权项

1. A system for drawing a pattern on an electron-sensitive resist layer covering a semiconductor wafer, the system comprising:
an electron gun housing unit provided with a plurality of small-sized electron guns arranged in parallel with each other, wherein each of the electron guns forms a linear electron beam along the central axis line, each of the electron guns has a hollow column section for emitting the formed electron beam, and a micro deflection unit is disposed inside the column section for adjusting the inclination of the electron beam passing inside by a minute angle; a movable stage disposed below the electron gun housing unit and capable of moving in the X-Y directions; a wafer stage disposed on the movable stage to support a semiconductor wafer; a mask wafer having at least one n division complementary mask (n is equal to or greater than 2), which has struts on the rear side for supporting membranes in which a pattern to be transferred to the resist layer is formed; a mask stage that holds the mask wafer peripherally and is disposed at a prescribed position above the semiconductor wafer held on the wafer stage in such a manner as to be integrated with the wafer stage; a pattern alignment error detection unit for detecting a misalignment between patterns on the mask wafer and patterns on the semiconductor wafer; and an inclination means having an input connected to an output of the pattern alignment error detection unit for generating a correction signal in an output connected to an input of the micro deflection unit in order to compensate for a misalignment between patterns on the mask wafer and patterns on the semiconductor wafer and minimize a placement error of the pattern, wherein the movable stage is moved in the X direction and the Y direction in order to irradiate electron beams emitted from the plurality of hollow columns in the electron gun housing unit over the surface of the mask wafer held on the mask stage.