Laser light source

摘要

A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.

主权项

1. A laser light source, comprising:
a semiconductor layer sequence on a substrate, the semiconductor layer sequence having an active region and a radiation coupling out area having a first partial region and a second partial region different than the first partial region, and a filter structure,wherein
the active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region, the second wavelength range comprises the first wavelength range, the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction, the filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction, the at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.