发明名称 |
ATOMIC LAYER EPITAXY FOR SEMICONDUCTOR GATE STACK LAYER FOR ADVANCED CHANNEL DEVICES |
摘要 |
Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time. |
申请公布号 |
SG11201610663W(A) |
申请公布日期 |
2017.01.27 |
申请号 |
SG11201610663W |
申请日期 |
2015.07.01 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SRINIVASAN, SWAMINATHAN T.;HUNTER, AARON MUIR;BAUER, MATTHIAS;SADE, AMIKAM |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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