PARTIAL BURIED CHANNEL TRANSFER DEVICE FOR IMAGE SENSORS
摘要
An image sensor pixel (400) includes a photosensitive element (410), a floating diffusion region (415), and a transfer device (425). The photosensitive element is disposed in a substrate layer (420) for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate (440) disposed over a buried channel dopant region (450). The transfer device also includes a surface channel device including a surface channel gate (445) disposed over a surface channel region (455). The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.
申请公布号
HK1181552(A1)
申请公布日期
2017.01.27
申请号
HK20130108807
申请日期
2013.07.29
申请人
豪威科技股份有限公司;豪威科技股份有限公司
发明人
CHEN, Gang;HU, Sing-Chung;TAI, Hsin-Chih;MAO, Duli;BIKUMANDLA, Manoj;ZHENG, Wei;QIAN, Yin;XIONG, Zhibin;VENEZIA, Vincent;KU, Keh-Chiang;RHODES, Howard E. E