| 发明名称 |
Three-Dimensional Mask-Programmed Read-Only Memory With Reserved Space |
| 摘要 |
The present invention discloses a 3D-MPROM with reserved level (3D-MPROMRL). Versions of the 3D-MPROMRL, including an original 3D-MPROMRL and at least an updated 3D-MPROMRL, collectively form a 3D-MPROMRL family. Within a 3D-MPROMRL family, 3D-MPROMRL's of different versions are same except for at least a reserved level, which is absent in the original 3D-MPROMRL but present in the updated 3D-MPROMRL. |
| 申请公布号 |
US2017025389(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615284534 |
申请日期 |
2016.10.03 |
| 申请人 |
ZHANG Guobiao |
发明人 |
ZHANG Guobiao |
| 分类号 |
H01L25/065;H01L27/105;G11C5/02 |
主分类号 |
H01L25/065 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A three-dimensional mask-programmed read-only memory with reserved level (3D-MPROMRL) family, comprising:
a first 3D-MPROM die comprising a first substrate and M memory levels vertically stacked above said first substrate; a second 3D-MPROM die comprising a second substrate and N memory levels vertically stacked above said second substrate; wherein M, N are positive integers and M<N; and, said first and second 3D-MPROM dice are same except for at least a reserved memory level, wherein said reserved memory level is absent in said first 3D-MPROM die but present in said second 3D-MPROM die. |
| 地址 |
Corvallis OR US |
