| 发明名称 |
APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND POINT OF USE CHEMISTRY |
| 摘要 |
In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber. |
| 申请公布号 |
US2017025252(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201514808612 |
申请日期 |
2015.07.24 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Liang Shurong;Biloiu Costel;Gilchrist Glen;Singh Vikram;Campbell Christopher;Hertel Richard John;Kontos Alex |
| 分类号 |
H01J37/305;H01J37/147;C23F1/12;H01J37/08 |
主分类号 |
H01J37/305 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus to treat a substrate, comprising:
an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate, the plasma beam comprising ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber. |
| 地址 |
Gloucester MA US |
