发明名称 |
RECONFIGURABLE GAS SENSOR ARCHITECTURE WITH A HIGH SENSITIVITY AT LOW TEMPERATURES |
摘要 |
A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas. |
申请公布号 |
US2017023520(A1) |
申请公布日期 |
2017.01.26 |
申请号 |
US201615287654 |
申请日期 |
2016.10.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Chey S. J.;Hamann Hendrik F.;Klein Levente;Lu Siyuan;Nagy Roland |
分类号 |
G01N27/414;C23C14/14;C23C14/30;C23C14/08;C23C14/34 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a gas sensing device, comprising:
forming a heater on a first side of a dielectric layer; depositing an insulating dielectric over the heater; forming a metal-oxide semiconductor gas sensing layer on a second side of the dielectric layer opposite the first side; patterning contacts on the gas sensing substrate; and depositing a noble material on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas. |
地址 |
Armonk NY US |