发明名称 RECONFIGURABLE GAS SENSOR ARCHITECTURE WITH A HIGH SENSITIVITY AT LOW TEMPERATURES
摘要 A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.
申请公布号 US2017023520(A1) 申请公布日期 2017.01.26
申请号 US201615287654 申请日期 2016.10.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Chey S. J.;Hamann Hendrik F.;Klein Levente;Lu Siyuan;Nagy Roland
分类号 G01N27/414;C23C14/14;C23C14/30;C23C14/08;C23C14/34 主分类号 G01N27/414
代理机构 代理人
主权项 1. A method for fabricating a gas sensing device, comprising: forming a heater on a first side of a dielectric layer; depositing an insulating dielectric over the heater; forming a metal-oxide semiconductor gas sensing layer on a second side of the dielectric layer opposite the first side; patterning contacts on the gas sensing substrate; and depositing a noble material on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.
地址 Armonk NY US