发明名称 |
Light-Emitting Semiconductor Chip |
摘要 |
A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak. |
申请公布号 |
US2017025570(A1) |
申请公布日期 |
2017.01.26 |
申请号 |
US201615287140 |
申请日期 |
2016.10.06 |
申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Peter Matthias;Meyer Tobias;Walter Alexander;Taki Tetsuya;Off Juergen;Butendeich Rainer;Hertkorn Joachim |
分类号 |
H01L33/06;H01L33/32;H01L33/00;H01L33/38;H01L33/24 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor chip comprising:
a semiconductor body with a semiconductor layer sequence, the semiconductor layer sequence comprising an n-conductive multilayer structure, a p-conductive semiconductor layer, and an active region provided for generating radiation; and a contact layer; wherein the n-conductive multilayer structure has a doping profile comprising at least one doping peak; wherein the active region is arranged between the n-conductive multilayer structure and the p-conductive semiconductor layer; wherein the semiconductor body has a recess that extends through the p-conductive semiconductor layer and the active region into the n-conductive multilayer structure; wherein the recess penetrates the at least one doping peak; and wherein the contact layer is disposed in the recess and electrically contacts the n-conductive multilayer structure. |
地址 |
Regensburg DE |