发明名称 Light-Emitting Semiconductor Chip
摘要 A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
申请公布号 US2017025570(A1) 申请公布日期 2017.01.26
申请号 US201615287140 申请日期 2016.10.06
申请人 OSRAM Opto Semiconductors GmbH 发明人 Peter Matthias;Meyer Tobias;Walter Alexander;Taki Tetsuya;Off Juergen;Butendeich Rainer;Hertkorn Joachim
分类号 H01L33/06;H01L33/32;H01L33/00;H01L33/38;H01L33/24 主分类号 H01L33/06
代理机构 代理人
主权项 1. A semiconductor chip comprising: a semiconductor body with a semiconductor layer sequence, the semiconductor layer sequence comprising an n-conductive multilayer structure, a p-conductive semiconductor layer, and an active region provided for generating radiation; and a contact layer; wherein the n-conductive multilayer structure has a doping profile comprising at least one doping peak; wherein the active region is arranged between the n-conductive multilayer structure and the p-conductive semiconductor layer; wherein the semiconductor body has a recess that extends through the p-conductive semiconductor layer and the active region into the n-conductive multilayer structure; wherein the recess penetrates the at least one doping peak; and wherein the contact layer is disposed in the recess and electrically contacts the n-conductive multilayer structure.
地址 Regensburg DE