| 摘要 |
Flexible device manufacturing method including: forming thin film by coating surface of support with predetermined solution in state where hydroxyl groups are present on surface; forming releasing layer by baking thin film; forming flexible substrate on releasing layer; forming device on flexible substrate; and releasing releasing layer, flexible substrate and device from support at interface between support and releasing layer. Predetermined solution contains alkylsilane alkoxide derivative and titanium alkoxide derivative. Baking temperature for baking thin film is at least 200° C. and at most 350° C. Ratio of number of silicon atoms in alkylsilane alkoxide derivative to number of titanium atoms in titanium alkoxide derivative is 3.3:1 to 4.1:1 when baking temperature is at least 200° C. and less than 270° C., 3.3:1 to 23:1 when baking temperature is at least 270° C. and at most 330° C., and 19:1 to 23:1 when baking temperature is more than 330° C. and at most 350° C. |
