| 发明名称 | Substrate processing method, substrate processing apparatus, and storage medium | ||
| 摘要 | A substrate processing method is performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed. The method includes supplying a first solvent in a gaseous state to a surface of the substrate to dissolve the pattern mask, and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent. | ||
| 申请公布号 | US9552987(B2) | 申请公布日期 | 2017.01.24 |
| 申请号 | US201414297661 | 申请日期 | 2014.06.06 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Miyata Yuichiro;Tanaka Keiichi;Ueda Kenichi;Shiozawa Takahiro |
| 分类号 | H01L21/311;H01L21/302;H01L21/461;B44C1/22;H01L21/027;H01L21/02;H01L21/67;G03F7/42;H01L21/768 | 主分类号 | H01L21/311 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A substrate processing method performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed, the method comprising: performing a preprocessing, the preprocessing including: supplying a preprocessing agent to the substrate to attach a liquid film onto a surface of the pattern mask;heating the substrate to dry the liquid film; andplanarizing the surface by cohesive force generated on the surface of the pattern mask when the liquid film is dried; supplying a first solvent in a gaseous state to the surface of the substrate to dissolve the pattern mask after performing the preprocessing; and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent. | ||
| 地址 | Tokyo JP | ||