发明名称 |
Array substrate, display device and method of manufacturing the array substrate |
摘要 |
An array substrate, a display device comprising the array substrate and a method of manufacturing the array substrate are provided. The array substrate include a substrate (1) and a plurality of sub-pixel units on the substrate (1), and each of the sub-pixel units includes a thin film transistor main body layer (2) and a color filter layer (5) disposed above the thin film transistor main body layer (2), and the thin film transistor main body layer (2) includes a gate layer (21), a source layer, a drain layer (24) and a passivation layer (25), an additional layer (7) is further disposed on an upper surface of the thin film transistor main body layer (2), a hollow photoresist material containing part (50) is disposed in a region of the additional layer corresponding to each of the sub-pixel units, a color film material is disposed within the photoresist material containing part (50), and a pixel electrode via hole (6) is formed in the additional layer (7) and the passivation layer (25) at a region corresponding to the drain layer (24). The thin film transistor in the array substrate has a more stable performance, the array substrate has a simpler manufacturing process and lower cost, and the display devices comprising the array substrate has a more stable performance. |
申请公布号 |
US9553110(B2) |
申请公布日期 |
2017.01.24 |
申请号 |
US201314360082 |
申请日期 |
2013.06.19 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Qi Yonglian;Shu Shi;Hui Guanbao |
分类号 |
H01L21/44;H01L27/12;G02F1/1362;G02F1/1335;G02F1/1368;H01L21/768;H01L27/32 |
主分类号 |
H01L21/44 |
代理机构 |
Ladas & Parry LLP |
代理人 |
Ladas & Parry LLP |
主权项 |
1. An array substrate, comprising a substrate and a plurality of sub-pixel units on the substrate, each of the sub-pixel units comprising a thin film transistor main body layer and a color filter layer disposed above the thin film transistor main body layer, and the thin film transistor main body layer comprising a gate layer, a source layer, a drain layer and a passivation layer, wherein, an additional layer is further disposed on an upper surface of the thin film transistor main body layer, a recessed part for accommodating photoresist material is disposed in a region of the additional layer corresponding to each of the sub-pixel units, the recessed part for accommodating photoresist material is formed at an upper surface of the additional layer, a color film material is disposed within the recessed part for accommodating photoresist material, and a pixel electrode via hole is formed in the additional layer and the passivation layer at a region corresponding to the drain layer. |
地址 |
Beijing CN |