Temperature modification for chemical mechanical polishing

摘要

Among other things, one or more systems and techniques for increasing temperature for chemical mechanical polishing (CMP) are provided. For example, a liquid heater component is configured to supply heated liquid to a polishing pad upon which a semiconductor wafer is to be polished, resulting in a heated polishing pad having a heated polishing pad temperature. The increased temperature of the heated polishing pad increases oxidation of the semiconductor wafer, which improves a CMP removal rate of material from the semiconductor wafer due to a decreased oxidation timespan and a stabilization timespan for reaching a stable CMP removal rate during CMP. In this way, the semiconductor wafer is polished utilizing the heated polishing pad, such as by a tungsten CMP process.

主权项

1. A system, comprising:
a fluid reservoir for storing a liquid; a nozzle for dispensing the liquid onto a polishing pad of a chemical mechanical polishing (CMP) system; a first fluid pathway from the fluid reservoir to the nozzle; a second fluid pathway from the fluid reservoir to the nozzle; a first valve disposed within the first fluid pathway; a second valve disposed within the second fluid pathway; a liquid heater component disposed within the second fluid pathway between the fluid reservoir and the second valve, the liquid heater component comprising a quartz heater configured to heat the liquid to generate heated liquid, wherein the heated liquid is supplied to the polishing pad upon which a semiconductor wafer is to be polished to generate a heated polishing pad having a heated polishing pad temperature; and a polishing component configured to:
responsive to the heated polishing pad temperature exceeding a threshold, polish the semiconductor wafer utilizing the heated polishing pad during a CMP stage.