| 发明名称 |
SILICON GERMANIUM FIN CHANNEL FORMATION |
| 摘要 |
A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an underlying fin and depositing an amorphous layer including Ge over the region of the underlying fin. The amorphous layer is oxidized to condense out Ge and diffuse the Ge into the region of the underlying fin to form a channel region with Ge in the fin. |
| 申请公布号 |
US2017018630(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201514800381 |
申请日期 |
2015.07.15 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATIONS ;STMicroelectronics, Inc. |
发明人 |
He Hong;Loubet Nicolas;Wang Junli |
| 分类号 |
H01L29/66;H01L29/167;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for channel formation in a fin transistor, comprising:
removing a dummy gate and dummy gate dielectric from a dummy gate structure to expose a region of an underlying fin; depositing an amorphous layer including Ge over the region of the underlying fin; and oxidizing the amorphous layer to condense out Ge and diffuse the Ge into the region of the underlying fin to form a channel region with Ge in the fin, and wherein oxidizing the amorphous layer forms an oxide layer and the method further comprises removing the oxide layer. |
| 地址 |
Armonk NY US |
