| 发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A nonvolatile semiconductor memory device comprises: a substrate; a memory cell that is disposed on the substrate and accumulates a charge as data; and a cover layer covering the memory cell. The cover layer has a structure in which a first silicon nitride layer, an intermediate layer, and a second silicon nitride layer are stacked sequentially from a memory cell side. |
| 申请公布号 |
US2017018558(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201615074033 |
申请日期 |
2016.03.18 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
SHAMOTO Reiko;Takekida Hideto |
| 分类号 |
H01L27/115;H01L21/28;H01L21/02 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile semiconductor memory device, comprising:
a substrate; a memory cell disposed on the substrate, the memory cell accumulating a charge as data; and a cover layer covering the memory cell, the cover layer having a structure in which a first silicon nitride layer, an intermediate layer, and a second silicon nitride layer are stacked sequentially from a side of the memory cell. |
| 地址 |
Minato-ku JP |
