Deposition of Metal Films Using Beta-Hydrogen Free Precursors

摘要

Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.

主权项

1. A method of depositing a film, the method comprising:
exposing at least a portion of a substrate surface to a first precursor comprising a compound having the general structurewhere M is a metal, each X is independently C, Si or Ge and each R comprises substantially no H; and
exposing at least a portion of the substrate surface to a reactant to deposit a metal-containing film on the substrate surface.