| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM |
| 摘要 |
A method of manufacturing: a semiconductor device includes fanning an oxide film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing a metal element and a halogen group to the substrate; and supplying an oxidant to the substrate. In the act of supplying the oxidant, a catalyst is supplied to the substrate together with the oxidant. In the act of supplying the precursor, the catalyst is not supplied to the substrate. |
| 申请公布号 |
US2017018419(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201415124915 |
申请日期 |
2014.03.13 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
USHIDA Takuro;KAMAKURA Tsukasa;HIROSE Yoshiro;NAKATANI Kimihiko |
| 分类号 |
H01L21/02;C23C16/52;C23C16/455;C23C16/40 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming an oxide film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing the metal element and a halogen group to the substrate; and supplying an oxidant to the substrate, wherein in the act of supplying the oxidant, a catalyst is supplied to the substrate together with the oxidant, and in the act of supplying the precursor, the catalyst is not supplied to the substrate. |
| 地址 |
Tokyo JP |
