Devices containing metal chalcogenides

摘要

Some embodiments include a device having a conductive material, a metal chalcogenide-containing material, and a region between the metal chalcogenide-containing material and the conductive material. The region contains a composition having a bandgap of at least about 3.5 electronvolts and a dielectric constant within a range of from about 1.8 to 25. Some embodiments include a device having a first electrode, a second electrode, and a metal chalcogenide-containing material between the first and second electrodes. The device also includes an electric-field-modifying region between the metal chalcogenide-containing material and one of the first and second electrodes. The electric-field-modifying region contains a composition having a bandgap of at least about 3.5 electronvolts having a low dielectric constant and a low conduction band offset relative to a workfunction of metal of the metal chalcogenide-containing material.

主权项

1. A device, comprising:
a first electrode, a second electrode, and a metal chalcogenide-containing material between the first and second electrodes; an electric-field-modifying region between the metal chalcogenide-containing material and one of the first and second electrodes, the region comprising at least one composition having a bandgap of at least about 3.5 electronvolts; and wherein the region is a first region and is between the first electrode and the metal chalcogenide-containing material, and further comprising a second region between the metal chalcogenide-containing material and the second electrode with the second region also comprising a composition having a bandgap of at least about 3.5 electronvolts.