发明名称 |
Micro device transfer head array |
摘要 |
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure. |
申请公布号 |
US9548233(B2) |
申请公布日期 |
2017.01.17 |
申请号 |
US201615052767 |
申请日期 |
2016.02.24 |
申请人 |
Apple Inc. |
发明人 |
Golda Dariusz;Bibl Andreas |
分类号 |
H01L21/683;H01L21/768;H01L23/48;H05K1/02;H05K1/03;H05K1/09;H05K1/11 |
主分类号 |
H01L21/683 |
代理机构 |
Blakely, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakely, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. A bipolar micro device transfer head array comprising:
a base substrate; an array of electrostatic transfer heads, each electrostatic transfer head including a pair of silicon electrodes, and a dielectric material covering a top surface of the pair of silicon electrodes; wherein each silicon electrode is doped. |
地址 |
Cupertino CA US |