| 发明名称 |
ACTIVE DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain. |
| 申请公布号 |
US2017012227(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201615096294 |
申请日期 |
2016.04.12 |
| 申请人 |
E Ink Holdings Inc. |
发明人 |
Zan Hsiao-Wen;Tsai Chuang-Chuang;Chen Chao-Hsuan;Hsu Cheng-Hang |
| 分类号 |
H01L51/05 |
主分类号 |
H01L51/05 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An active device, disposed on a substrate and comprising:
a gate; an organic active layer; a gate insulation layer, disposed between the gate and the organic active layer; a plurality of crystal induced structures, distributing in the organic active layer, wherein the crystal induced structures directly contact with the substrate or the gate insulation layer; and a source and a drain, disposed on two opposite sides of the organic active layer. |
| 地址 |
Hsinchu TW |
