| 发明名称 |
OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE |
| 摘要 |
There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10−1 Ωcm. There is also provided a semiconductor device including the oxide semiconductor film. |
| 申请公布号 |
US2017012133(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201515119258 |
申请日期 |
2015.08.21 |
| 申请人 |
SUMITOMO ELECTRONIC INDUSTRIES, LTD. |
发明人 |
Miyanaga Miki;Watatani Kenichi;Awata Hideaki |
| 分类号 |
H01L29/786;H01L29/24;C23C14/34;H01L21/477;H01L21/467;C23C14/08;C01G41/00;H01L21/02 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein
the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10−i Ωcm. |
| 地址 |
Osaka-shi JP |
