| 发明名称 |
SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
| 摘要 |
Provided is a semiconductor light emitting element formed by growing an active layer in the c-axis direction and having a peak emission wavelength of at least 530 nm, wherein the light emission efficiency is greater than the conventional art. A semiconductor light-emitting element has a peak emission wavelength of greater than or equal to 530 nm, and comprise: an n-type semiconductor layer; an active layer formed above n-type semiconductor layer; and a p-type semiconductor layer formed above the active layer. In the active layer, a first layer composed of InX1Ga1-X1N (0≦X1≦0.01), a second layer composed of InX2Ga1-X2N (0.2<X2<1), and a third layer composed of AlY1Ga1-Y1N (0<Y1<1) are laminated, and at least the first layer and the second layer are formed cyclically. |
| 申请公布号 |
US2017012166(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201515116268 |
申请日期 |
2015.02.02 |
| 申请人 |
Ushio Denki Kabushiki Kaisha |
发明人 |
MIYOSHI Kohei |
| 分类号 |
H01L33/04;H01L33/32 |
主分类号 |
H01L33/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor light-emitting element having a peak emission wavelength of greater than or equal to 530 nm, comprising:
an n-type semiconductor layer; an active layer formed above the superlattice layer n type semiconductor layer; and a p-type semiconductor layer formed above the active layer, wherein in the active layer, a first layer composed of In1Ga1-X1N (0≦X1≦0.01), a second layer composed of InX2Ga1-X2N (0.2<X2<1), and a third layer composed of AlY1Ga1-Y1N (0<Y1<1) are laminated, and at least the first layer and the second layer are formed cyclically; the second layer is composed of InX2Ga1-X2N (0.28≦X2≦0.33) having a film thickness of greater than or equal to 2.4 nm and less than or equal to 2.8 nm; and letting a film thickness of the first layer be T1, a film thickness of the second layer be T2, and a film thickness of the third layer be T3, relations of 5T2 <T1 <10T2 and T3 <T2 are satisfied. |
| 地址 |
Tokyo JP |
