发明名称 SWITCH CIRCUIT
摘要 If DMOS transistors M1 and M2 are off, parasitic diodes (D11, D12, D21, D22) constitute the only routes through which a current can flow to the drains of the DMOS transistors M1 and M2. The drains of the DMOS transistors M1 and M2 are on the cathode sides of the parasitic diodes (D11, D12, D21, D22). The drain voltage is therefore the highest voltage on the anode sides (terminal T1, terminal T2, semiconductor substrate 5) of the parasitic diodes (D11, D12, D21, D22). In other words, the potentials of the drains of the DMOS transistors M1 and M2 do not drop below the reference potential SB of the semiconductor substrate 5, irrespective of the voltage applied to the terminals T1 and T2.
申请公布号 WO2017006842(A1) 申请公布日期 2017.01.12
申请号 WO2016JP69527 申请日期 2016.06.30
申请人 ALPS ELECTRIC CO., LTD. 发明人 SAITO, Junichi
分类号 H03K17/687;H01L21/822;H01L21/8234;H01L27/04;H01L27/088 主分类号 H03K17/687
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