MULTI-CYCLE ALD PROCESS FOR FILM UNIFORMITY AND THICKNESS PROFILE MODULATION

摘要

Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.

主权项

1. A method of processing a substrate housed in a chamber, the method comprising:
(a) exposing the substrate to a reactant for a duration insufficient to saturate the surface of the substrate, wherein exposing the substrate to the reactant further comprises flowing one or more carrier gases; (b) exposing the substrate to a plasma to deposit at least a partial layer of film on the substrate; and (c) repeating (a) and (b) in two or more deposition cycles in alternating pulses, wherein the carrier gas flow rates of at least one of the one or more carrier gases during (a) are varied during the two or more deposition cycles from deposition cycle to deposition cycle.